TCAD for reliability

Future Aspects of Process and Device Simulation 1 TCAD

Process and device simulation is commonly used for the design of new VLSI devices and processes and as an explorative tool to gain a better understanding of device and process physics. On the other hand, simulation is also carried out after the design phase to optimize certain parameters of a technology, e.g., to improve device reliability or to increase the yield. For these tasks the term "Tec...

TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Article history: Received 25 May 2015 Received in revised form 20 June 2015 Accepted 24 June 2015 Available online xxxx

TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps

For the realization of modern integrated circuits new interconnect structures like through-silicon-vias and solder bumps, together with complex multilevel 3D interconnect structures are gaining importance. The application of these new structures unavoidably rises different reliability issues like thermal gradients, electromigration, and stressmigration. In this paper we apply state-of-the art T...

Physically based models of electromigration: From Black's equation to modern TCAD models

Electromigration failure is a major reliability concern for integrated circuits. The continuous shrinking of metal line dimensions together with the interconnect structure arranged in many levels of wiring with thousands of interlevel connections, such as vias, make the metallization structure more susceptible to failure. Mathematical modeling of electromigration has become an important tool fo...